Optical lithography : a historical perspectiveRONSE, Kurt.Comptes rendus. Physique. 2006, Vol 7, Num 8, pp 844-857, issn 1631-0705, 14 p.Article

E-beam Mask-less Lithography: prospects and challengesRONSE, Kurt.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7637, issn 0277-786X, isbn 978-0-8194-8051-4 0-8194-8051-7, 76370A.1-76370A.7Conference Paper

Micro- and Nano- Engineering 98, MNE. Proceedings of the International Conference on Micro- and Nanofabrication, September 22-24 1998, Leuven, BelgiumVAN DEN HOVE, Luc; VAN ROSSUM, Marc; RONSE, Kurt et al.Microelectronic engineering. 1999, Vol 46, Num 1-4, issn 0167-9317, 523 p.Conference Proceedings

Electron beam lithography simulation for mask makingMACK, C. A.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 283-286, issn 0167-9317Conference Paper

Understanding CD variations in optical lithography using predictive modeling techniquesFLAGELLO, D. G.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 35-39, issn 0167-9317Conference Paper

Progress in the development of extreme ultraviolet lithography exposure systemsSTULEN, R. H.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 19-22, issn 0167-9317Conference Paper

CMOS device fabrication and the evolution of optical lithographic exposure toolsARNOLD, W. H.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 7-9, issn 0167-9317Conference Paper

A very-high-density scintillation-data-storage deviceGOODBERLET, J. G.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 145-148, issn 0167-9317Conference Paper

Computation of reflected images from EUV masksBOLLEPALLI, S. B; CERRINA, F.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 443-447, issn 0167-9317Conference Paper

Three paths to improved critical dimension control for patterning 200 nm to 100 nm transistor gatesLIU, H.-Y.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 41-45, issn 0167-9317Conference Paper

Process optimisation of DUV photoresists for electron beam lithographyTHOMS, S; MACINTYRE, D.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 287-290, issn 0167-9317Conference Paper

Line width control using a defocused low voltage electron beamDAVID, C; HAMBACH, D.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 219-222, issn 0167-9317Conference Paper

Performance of an image adjustment device for SCALPELWASKIEWICZ, W. K.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 267-270, issn 0167-9317Conference Paper

Reticle quality needs for advanced 193nm lithographyJONCKHEERE, Rik; VANDENBERGHE, Geert; WIAUX, Vincent et al.SPIE proceedings series. 2001, pp 108-117, isbn 0-8194-4111-2Conference Paper

Comparative study of AZPF514 and UVIII chemically amplified resists for electron beam nanolithographyZHENG CUI; PREWETT, P.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 255-258, issn 0167-9317Conference Paper

Real time proximity effects neurocorrectorJEDRASIK, P.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 81-84, issn 0167-9317Conference Paper

The 35th International Conference on Micro- and Nano-Engineering (MNE), 28 September-1 October, 2009, Ghent, BelgiumRONSE, Kurt; VAN THOURHOUT, Dries; DE GENDT, Stefan et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, issn 0167-9317, 974 p.Conference Proceedings

Functional scanning electron microscope of low beam energy with integrated electron optical system for nanolithographyZLATKIN, A; GARCIA, N.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 213-217, issn 0167-9317Conference Paper

Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resistsPATSIS, G. P; GLEZOS, N.Microelectronic engineering. 1999, Vol 46, Num 1-4, pp 359-363, issn 0167-9317Conference Paper

172 nm pre-treatment for PDMS/PDMS replicationMÖLLENBECK, S; BOGDANSKI, N; MAYER, A et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1519-1521, issn 0167-9317, 3 p.Conference Paper

22 nm silicon nanowire gas sensor fabricated by trilayer nanoimprint and wet etchingCHEN GAO; DENG, Shao-Ren; JING WAN et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 927-930, issn 0167-9317, 4 p.Conference Paper

3D materials made of gold using Nanoimprint LithographyBERGMAIR, Iris; MÜHLBERGER, Michael; HINGERL, Kurt et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1008-1010, issn 0167-9317, 3 p.Conference Paper

3D stacked arrays of fins and nanowires on bulk siliconBOPP, M; CORONEL, P; HIBERT, C et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1348-1351, issn 0167-9317, 4 p.Conference Paper

An integrated field emission array for ion desorptionRESNICK, P. J; HOLLAND, C. E; SCHWOEBEL, P. R et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1263-1265, issn 0167-9317, 3 p.Conference Paper

Channel height dependent protein nucleation and crystal growth in microfluidic devicesLOUNACI, Malika; YONG CHEN; RIGOLET, Pascal et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 750-752, issn 0167-9317, 3 p.Conference Paper